Abstract

The reliability of binary GaAs active layer (Al,Ga)As double-heterostructure injection lasers is nearly 2 orders of magnitude worse¹ than that of 5-8 mole % AlAs active layer lasers. The binary active layer lasers have 20°C ambient extrapolated median lifetimes of <1.2 × 10⁴ h, excluding~60% infant failures and using a 0.7-eV extrapolation energy.² Although the difference in operating wavelengths due to addition of the 5-8 mole % AlAs results in an ~1-db/km greater optical fiber loss for the more reliable devices, both operating wavelengths are desired for wavelength multiplexing.

© 1981 Optical Society of America