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Self aligned GaAs/GaALAs semiconductor laser with lateral spatial variation in thickness grown by MO-CVD

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Abstract

Diode lasers with active and/or cladding layers that vary in thickness laterally have low threshold current, linear L vs I characteristics, and stable fundamental transverse mode control.1,2 date, such lasers have been grown exclusively by liquidphase epitaxy (LPE). We report the first self-aligned nonplanar laser structure grown by metal organic- chemical vapor deposition (MO-CVD).3 Our one- step process enables us to retain all the advantages of MO-CVD (especially reproducibility of the L vs I characteristic) while introducing a lateral wave- guiding structure.

© 1981 Optical Society of America

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