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Conferences > OFC > 1981 > MB > MB2

Recent developments in (AlGa)As DM lasers grown by molecular beam epitaxy for optical communication systems

W. T. Tsang

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Abstract

The cw electrooptical characteristics of 5-μm shallow proton-bombardeb stripe lasers fabricated from MBE grown DH wafers that have Al0.08Ga0.92As active layers at elevated temperatures (55-70°C) are compared with those obtained from similar lasers fabricated from LPE grown DH wafers, it is shown that the MBE lasers maintain their excellent cw device characteristics even at elevated temperatures. The temperature-dependence of the cw Ith of MBE lasers is significantly less than that of the LPE lasers.

© 1981 Optical Society of America

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