In order to take advantage of the low- attenuation and zero-material-dispersion properties of silica fibers at wavelengths near 1.27 μm, practical light sources and detectors must be developed for these wavelengths. Both light sources and detectors operating over the range 1.0-1.7 μm can be fabricated from the InGasAsP quaternary allow materials system. Devices fabricated from lattice-matched InP-InGaAsP heterostructures appear to be promising for applications including photodiodes, avalanche photodiodes (APD’s), high-radiance light- emitting diodes (LED’s), and injection lasers. In the present work we report the properties of InGaAsP light sources and detectors. Avalanche photodiodes with uniform, high-speed gains of ~ 40 have been fabricated. In addition, InGaAsP LED’s with a high radiance geometry suitable for coupling to an optical fiber are described.

© 1979 Optical Society of America

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