Abstract

TiNx/SiO2/VOx noval absorption structure for long-wave infrared wavelengths is proposed and simulated. This new structure shows as average high absorptance as more than 81% between 8μm and 14μm wavelengths. VOx thin film infrared detector with this high absorption structure has been fabricated and tested successfully. The results show that it’s feasible to be applied to imaging and related optoelectronics devices.

© 2018 The Author(s)

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