Laser Irradiation System for n-GaAs Stealth Dicing

Hyun-Woo Song; Jongdeog Kim

doi:10.1364/OEDI.2018.OT4A.50

The International Photonics and Optoelectronics Meeting (POEM)
OSA Technical Digest (Optica Publishing Group, 2018),
paper OT4A.50
•https://doi.org/10.1364/OEDI.2018.OT4A.50

Laser Irradiation System for n-GaAs Stealth Dicing

Hyun-Woo Song and Jongdeog Kim

Optoelectronic Devices and Integration 2018

Wuhan China
31 October–3 November 2018
ISBN: 978-1-943580-51-4

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OEDI Poster Session (OT4A)

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H. Song and J. Kim, "Laser Irradiation System for n-GaAs Stealth Dicing," in The International Photonics and Optoelectronics Meeting (POEM), OSA Technical Digest (Optica Publishing Group, 2018), paper OT4A.50.

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Abstract

We report a laser reaction system providing back-side damages from front-side irradiation for n++ GaAs stealth dicing. High energy laser pulses of 10 μJ at 1030 nm were used in a low pressure reaction chamber.

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