Composition dependent Raman intensity ratio between GaBi and GaAs mode in GaAsBi

Weiyang Qiu; Xingjun Wang; Ning Li; Pingping Chen

doi:10.1364/OEDI.2015.JW3A.23

International Photonics and OptoElectronics
OSA Technical Digest (online) (Optica Publishing Group, 2015),
paper JW3A.23
•https://doi.org/10.1364/OEDI.2015.JW3A.23

Composition dependent Raman intensity ratio between GaBi and GaAs mode in GaAsBi

Weiyang Qiu, Xingjun Wang, Ning Li, and Pingping Chen

Optoelectronic Devices and Integration 2015

Wuhan China
16–19 June 2015
ISBN: 978-1-943580-01-9

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W. Qiu, X. Wang, N. Li, and P. Chen, "Composition dependent Raman intensity ratio between GaBi and GaAs mode in GaAsBi," in International Photonics and OptoElectronics, OSA Technical Digest (online) (Optica Publishing Group, 2015), paper JW3A.23.

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Abstract

We investigated the intensity ratio between GaBi and GaAs-LO mode in Raman scattering. Good linear dependence on the Bismuth content for x<0.03 provides a new way to determine the Bismuth composition in GaAsBi.

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