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Novel InP Based Optoelectronic Devices for Microwave Photonics Applications

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Abstract

Semiconductor electro-optic modulators with reduced waveguide loss and enhanced modulation efficiency are fabricated based on novel n-i-n InGaAlAs/InAlAs multiple quantum barriers. Back-to-back uni-traveling-carrier photodiodes with high responsivity, high saturation current and wide bandwidth are demonstrated.

© 2014 Optical Society of America

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