High-performance Photonic Integrated Circuits Based on Si-Ge-silica Monolithic Photonic Platform

K. Yamada; K. Yamada; T. Tsuchizawa; T. Tsuchizawa; H. Nishi; H. Nishi; R. Kou; R. Kou; T. Hiraki; T. Hiraki; K. Takeda; K. Takeda; H. Fukuda; Y. Ishikawa; K. Wada; T. Yamamoto

doi:10.1364/OECC_PS.2013.TuN2_2

2013 18th OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching
(Optica Publishing Group, 2013),
paper TuN2_2
•https://doi.org/10.1364/OECC_PS.2013.TuN2_2

High-performance Photonic Integrated Circuits Based on Si-Ge-silica Monolithic Photonic Platform

K. Yamada, T. Tsuchizawa, H. Nishi, R. Kou, T. Hiraki, K. Takeda, H. Fukuda, Y. Ishikawa, K. Wada, and T. Yamamoto

OptoElectronics and Communications Conference and Photonics in Switching 2013

Kyoto Japan
30 June–4 July 2013
ISBN: 978-4-88552-271-0

From the session
High-density Photonic Integration Platforms and their Applications (Silicon) (TuN2)

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K. Yamada, T. Tsuchizawa, H. Nishi, R. Kou, T. Hiraki, K. Takeda, H. Fukuda, Y. Ishikawa, K. Wada, and T. Yamamoto, "High-performance Photonic Integrated Circuits Based on Si-Ge-silica Monolithic Photonic Platform," in 2013 18th OptoElectronics and Communications Conference held jointly with 2013 International Conference on Photonics in Switching, (Optica Publishing Group, 2013), paper TuN2_2.

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Abstract

For telecommunications applications of highly-integrated silicon-based photonic devices, we have developed a silicon-germanium-silica monolithic photonic integration platform, on which high-performance silica-based passive devices and compact, high-speed silicon-based dynamic/active devices can be monolithically integrated.

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