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InGaAs Photodiodes on Silicon by Heteroepitaxy

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Abstract

InGaAs photodiodes were realized on Si by heteroepitaxy, demonstrating low dark current density of 0.45 mA/cm2, responsivity up to 0.64 A/W and a bandwidth of 11.2 GHz at 1550 nm.

© 2021 The Author(s)

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