Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Conferences > OECC > 2021 > JS3F > JS3F.10

Performance Characterization of High-Speed InAlAs Avalanche Photodiode with Double Passivation

Meng-Chien Wu, Wen-Jeng Ho, Jheng-Jie Liu, Chia-Chun Yu, and Yen-Chu Li

Not Accessible

Your library or personal account may give you access

Abstract

We fabricated high speed InAlAs avalanche photodiode without guard ring. It demonstrated the dark current of 1.9 nA and capacitance of 0.16 pF at 0.9 Vbr, and f3-dB of 10 GHz under different incident optical-powers.

© 2021 The Author(s)

PDF Article
More Like This
High-Speed InGaAs/InAlAs Avalanche Photodiode with Low Dark Current

Rui Wang, Xiaohong Yang, Hui Wang, and Tingting He
M4A.153 Asia Communications and Photonics Conference (ACP) 2020

High-Speed and High Saturation Power Avalanche Photodiode for Coherent Communication

Nassem, Sean Yang, Sheng-Yun Wang, Hsiang-Szu Chang, H.-S. Chen, Jack Jia-Sheng Huang, Emin Chou, Yu-Heng Jan, and Jin-Wei Shi
F2C.5 Optical Fiber Communication Conference (OFC) 2021

High Speed and High Gain-Bandwidth-Product Resonant-Cavity InGaAs/InAlAs Avalanche Photodiodes

H. Nie, C. Lenox, G. Kinsey, P. Yuan, A. L. Holmes, B. G. Streetman, and J. C. Campbell
TuI2 Optical Fiber Communication Conference (OFC) 1999

View More...
Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use