Abstract

The relation of the local structure of the phase-change recording material and the interface layer has not been clarified while we already reported that the interface layer affects the electronic state of recording material by using the HX-PES method. It is necessary to understand more detailed physical phenomenon for crystallization mechanism of recording layer in order to develop the high-speed and higher density rewritable optical recording media. The influence of the interface layer to the local structure for atomic arrangement of a GeBiTe phase-change material was investigated by using XAFS on the actual rewritable HD DVD media. The XAFS signal from the actual media is obtained nondestructively. It has been shown that the interface layer does not influence the local atomic arrangement of the recording layer, while the electronic state of recording layer is changed by the presence of the interface layer.

© 2007 Optical Society of America