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A model for phase-change process in GeSbTe thin-films used for optical and electrical data storage

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Abstract

We describe a model to simulate phase-change behaviour of GeSbTe thin-film alloys. Based on classical nucleation theory we developed a model for crystallization of GeSbTe. We describe nucleation and growth of crystalline clusters in an amorphous medium by using rate equations. On the assumption that a crystalline cluster can grow or decay by interactions with single molecules a set of rate equations has been used to describe all possible cluster sizes. Reaction rates have been then modelled by considering possible molecular processes during crystallization. We have used this model to simulate the phase-change process of GeSbTe during isothermal and non-isothermal heat treatments. It has been shown that the model can mimic experiments taken from the literature very well. It can successfully explain and predict the crystallization kinetics, transient effects, and influences of different substrates on crystallization.

© 2003 Optical Society of America

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