GaAsSb Quantum Well for 980nm Laser Diode

Hirotatsu Ishii; Mikihiro Yokozeki; Masayuki Iwami; Akihiko Kasukawa

doi:10.1364/OAA.2003.TuB3

Optical Amplifiers and Their Applications
OSA Technical Digest Series (Optica Publishing Group, 2003),
paper TuB3
•https://doi.org/10.1364/OAA.2003.TuB3

GaAsSb Quantum Well for 980nm Laser Diode

Hirotatsu Ishii, Mikihiro Yokozeki, Masayuki Iwami, and Akihiko Kasukawa

Optical Amplifiers and Their Applications 2003

Otaru Japan
6–9 July 2003
ISBN: 1-55752-752-0

From the session
Pump Lasers and Transmitters (TuB)

Not Accessible

Your library or personal account may give you access

Get PDF
Email
Share
Get Citation
Copy Citation Text
H. Ishii, M. Yokozeki, M. Iwami, and A. Kasukawa, "GaAsSb Quantum Well for 980nm Laser Diode," in Optical Amplifiers and Their Applications, OSA Technical Digest Series (Optica Publishing Group, 2003), paper TuB3.

Export Citation
- BibTex
- Endnote (RIS)
- HTML
- Plain Text
Citation alert
Save article

Abstract

We propose the novel material, GaAsSb, as the active layer for highly reliable operations of 980nm LDs. The GaAsSb-QW LDs show higher COD level and longer lifetime in a preliminary APC test than InGaAs-QW LDs.

PDF Article

More Like This

Comparative Study on 980-nm Quantum-dot and Quantum-well Laser Diode

K. W. Kim, K. W. Jung, S. P. Ryu, N. K. Cho, J. Y. Lim, S. J. Park, J. D. Song, W. J. Choi, J. I. Lee, and J. H. Park
ThA3_6 Conference on Lasers and Electro-Optics/Pacific Rim (CLEO/PR) 2007

Circular beam 980nm strained quantum well lasers

Tetsuro Ijichi, Michio Ohkubo, Yoshikazu Ikegami, and Toshio Kikuta
TUC3 Optical Amplifiers and Their Applications (OAA) 1993

Recent progress in reliable 980-nm pump laser diodes

Shin Ishikawa
ThC3 Optical Fiber Communication Conference (OFC) 1995

Previous Article Next Article