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Ultrafast Gain Dynamics in Semiconductor Amplifiers

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Abstract

Within the last couple of years a large effort has been devoted to studies of carrier dynamics in semiconductor laser amplifiers, ranging from work on gain and refractive index dynamics in bulk laser diode amplifer [1]-[7], strained and unstrained multiple quantum-well laser diode amplifiers [8]-[11], to carrier capture and transport effects in special designed quantum-well structures [12]- [14] and quantum-well laser diodes [15]-[18], The main driving force behind this work is the limited modulation bandwidth observed in multiple quantum-well laser diodes [19]-[23], On the contrary, nonlinear effects play a key role in operation of optical switches based on nonlinear refractive index dynamics [24] and ultra-high frequency modelocked laser diodes such as the colliding pulse modelocked quantum-well laser [25].

© 1993 Optical Society of America

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