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Strain Induced Exciton Absorption Shift WS2 Monolayer Integrated Photodetector

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Abstract

We demonstrate the effect of local non-homogeneous strain on WS2 monolayer integrated on a SiN photonic waveguide showing a strong spectral responsivity (80mA/W) at exciton wavelength (620nm) and shift of ~10nm in photodetector device.

© 2021 The Author(s)

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