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Theoretical Study on the Optoelectronic Properties of Al1-xGaxN-Based Deep UV LEDs with Single and Multiple Quantum Well Heterostructures

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Abstract

Characteristics of Al1–xGaxN-based deep UV LEDs with varied number of Al0.5Ga0.5N/Al0.4Ga0.6N quantum well(s) are theoretically investigated. The effects of quantum design on the internal quantum efficiency, radiative transport, and output power are discussed.

© 2021 The Author(s)

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