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Supercontinuum Generation in Bandgap Engineered Silicon Rich Nitride Waveguides – a New Back-End CMOS Compatible Nonlinear Optics Platform

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Abstract

Supercontinuum generation over 0.6 of an octave is demonstrated using a pump at 1.55µm on silicon – rich nitride waveguides. Optical characterization shows that the SRN films have a band gap of 1.85eV, and do not suffer from two photon absorption at 1.55µm. The developed waveguides have a nonlinear parameter of 550 W−1/m, 500 times larger than that in silicon nitride waveguides.

© 2015 Optical Society of America

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