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Optical Memory Elements with Extremely Wide Hysteresis Window (94mA) Using Partly Saturable-Absorber Novel Active MMI Bi-Stable Laser Diodes

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Abstract

Novel active MMI bi-stable laser diodes are proposed and demonstrated. Using partly saturable-absorber configuration in active MMI, extremely wide hysteresis window of 94mA was achieved with 30fJ optical switching energy in 335µm total device length.

© 2010 IEEE Communications Society, IEEE Photonics Society, OSA, Telcordia

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