Abstract
We demonstrate three methods for the fabrication of large scale ordered silicon nanorwires arrays using reactive ion etching (RIE) or metal-assisted chemical etching though colloidal lithography or anodic aluminum oxide (AAO) templates. Si NWAs with desirable diameters could be obtained by shrinking the sizes of colloidal lithography or the pore sizes of AAO templates. The reflection can be eliminated effectively over broadband regions by controlled NWAs; i.e., the wavelength-averaged total reflectance is decreased to 10.0 % at the wavelengths of 200-850 nm. The resulting nanostructures might have great potential applications in photovoltaics.
© 2013 Optical Society of America
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