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Semiconductor Saturable Absorber Q-Switching of a Holmium Microchip Laser

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Abstract

A Ho:YAG ceramic microchip laser Q-switched by a semiconductor saturable absorber generated 450 mW at 2089 nm with 37% slope efficiency. Stable 89-ns, 3.2-µJ pulses are achieved at a repetition rate of 141 kHz.

© 2016 Optical Society of America

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