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Optimization of Slot Waveguide Modulator Based on Epsilon-Near-Zero Effect

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Abstract

Multi-slot electro-optic waveguide modulators based on carrier-induced epsilon-near-zero effect are theoretically investigated. The extinction ratio of the tri-slot modulator is 1.02 dB/ μm, which is higher than the single- and dual-slot modulators.

© 2020 The Author(s)

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