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Conferences > LS > 2019 > JTu3A > JTu3A.76

Towards III-nitride on silicon active photonic circuits

F. Tabataba-Vakili, S. Rennesson, B. Damilano, L. Doyennette, C. Brimont, T. Guillet, E. Frayssinet, J. Brault, J.-Y. Duboz, I. Roland, M. El Kurdi, X. Checoury, S. Sauvage, F. Semond, P. Boucaud, and B. Gayral

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Abstract

We present our progresses towards active photonic circuits based on III-nitride semiconductors epitaxially grown on silicon. We study in particular the critical coupling of lasing InGaN/GaN microdisks to adjacent suspended waveguides.

© 2019 The Author(s)

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