Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Indirect-exciton-related optical properties in atomic-layer-doped GaAs structures

Not Accessible

Your library or personal account may give you access

Abstract

The indirect-exciton-related terahertz optical absorption in atomic-layer-doped GaAs structures is studied. Effective mass and the two-level rotating wave approximations are used to calculate electron-hole states and absorption coefficient, respectively.

© 2014 Optical Society of America

PDF Article
More Like This
Time-resolved optical investigation of spatially indirect excitons in GaAs/GaSb quantum dots

G. Wang, C-K. Sun, H. R. Blank, B. Brar, J. E. Bowers, H. Kroemer, and M. H. Pilkuhn
QThC4 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996

Excitonic Dark States in Single Atomic Layer of Transition Metal Dichalcogenide

Ziliang Ye, Ting Cao, Kevin O’Brien, Hanyu Zhu, Xiaobo Yin, Yuan Wang, Steven G. Louie, and Xiang Zhang
LW2I.4 Laser Science (LS) 2014

Indirect exciton mediated optical transistors

J. Wilkes
CD_P_8 The European Conference on Lasers and Electro-Optics (CLEO/Europe) 2013

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved