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Conferences > LAOP > 2012 > LM4A > LM4A.1

Terahertz Sensing and Imaging with Silicon Field-Effect Transistors up to 9 THz

Alvydas Lisauskas, Sebastian Boppel, Dalius Seliuta, Linas Minkevičius, Irmantas Kašalynas, Gintaras Valušis, B. Khamaisi, Viktor Krozer, E. Socher, and Hartmut G. Roskos

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Abstract

The detection of THz radiation is linked with mainstream silicon technology using plasmonic mixing in MOSFETs. We report imaging in heterodyne and subharmonic-mixing mode for enhanced dynamic range, and present a 220-GHz all-silicon imager.

© 2012 Optical Society of America

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