In this paper we investigate a practical technique for estimating the material gain and single pass gain spectrum of wide band Semiconductor Optical Amplifier (SOA) in swept source sensing applications. The relation between the SOA Amplified Spontaneous Emission (ASE) and single pass gain spectrum is practically explored and elaborated for this purpose. More than 200 nm gain spectrum is estimated and used to feed the design process of a recently developed MEMS based swept laser.

© 2016 Optical Society of America

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