Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Diode-Pumped 214.8-nm Nd:YAG/Cr4+:YAG Microchip-Laser System for the Detection of NO

Not Accessible

Your library or personal account may give you access

Abstract

A passively (2-switched Nd:YAG/Cr4+:YAG microchip laser at 214.8-nm (46556 cm−1, the fifth harmonic of 1.074-µm) was developed. NO was detected by laser-induced fluorescence at a sensitivity of −15 ppbv in a simple, compact optical system.

© 2000 Optical Society of America

PDF Article
More Like This
Passively Q-switched 214.8-nm Nd:YAG/Cr4+:YAG microchip-laser system for the detection of NO

J. J. Zayhowski, C. C. Cook, J. Wormhoudt, and J. H. Shorter
WB4 Advanced Solid State Lasers (ASSL) 2000

High output passively Q-switched diode- pumped cw Nd:YAG/Cr4+:YAG laser

Jie Song, Cheng Li, Nam Seong Kim, and Ken-ichi Ueda
CTuE4 Conference on Lasers and Electro-Optics (CLEO:S&I) 2000

Diode-pumped passively Q-switched Nd:GdVO4 laser with a Cr4+:YAG crystal as the saturable absorber

Cheng Li and Ken-ichi Ueda
WE6 Advanced Solid State Lasers (ASSL) 2000

Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved