Abstract
Temperature sensor is the most important element in bolometers, and many kinds of sensors, such as resistor (thermistor), pn-junction diode, FET, etc., have been reported. However, there is a tradeoff between responsivity and output noise, and fair comparison has not been made among different devices and materials. This time, we systematically compare the performances of MOSFETs (n- and p-channel), pn-junction diodes (with and without body doping) and resistors with different materials (n+ and p+ single-crystal Si, and n+ polycrystalline Si) by assuming the 1-THz antenna-coupled bolometer that allows the area of 15 μm × 15 μm for the integrated heater and the temperature sensor.
© 2017 Japan Society of Applied Physics, Optical Society of America
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