Abstract
This study describes the applications of a self-assembled monolayer (SAM) to the fabrication of MoS2 FETs. SAM has the ability to generate highly aligned electrodes and provide excellent electrical insulation [1]−[3]. The fabrication process of MoS2 FETs includes removing metal layer on SAM and the utilization of SAM as an ultrathin gate dielectrics. This methods enables a rapid route to fabricate MoS2 FETs accompanied by low driving voltage.
© 2016 Japan Society of Applied Physics, Optical Society of America
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