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  • JSAP-OSA Joint Symposia 2016 Abstracts
  • (Optica Publishing Group, 2016),
  • paper 13p_A37_12

Multifunctional Phosphonic Acid Self-Assembled Monolayer for Metal Patterning and Ultrathin Gate Dielectrics in Fabrication of MoS2 Field-Effect Transistors

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Abstract

This study describes the applications of a self-assembled monolayer (SAM) to the fabrication of MoS2 FETs. SAM has the ability to generate highly aligned electrodes and provide excellent electrical insulation [1]−[3]. The fabrication process of MoS2 FETs includes removing metal layer on SAM and the utilization of SAM as an ultrathin gate dielectrics. This methods enables a rapid route to fabricate MoS2 FETs accompanied by low driving voltage.

© 2016 Japan Society of Applied Physics, Optical Society of America

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