Abstract
Graphene and other 2D materials are attractive for nanomaterial-based devices. However, their properties are highly susceptible to adsorbed gas species on the surface, which makes it important to study gas adsorption dynamics in these materials. Here we applied laser THz emission spectroscopy (LTES) to study O2 adsorption dynamics in graphene deposited on SI-InP. THz emission from SI-InP dramatically changes upon O2 adsorption because O2 adsorbates induce local electric dipoles and modify the SI-InP surface depletion layer [1].
© 2015 Japan Society of Applied Physics, Optical Society of America
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