Abstract
Nowadays, blue light-emitting diodes (LEDs) are being utilized in various applications ranging from the backlight units of liquid crystal displays to the general lighting. Blue LEDs, which forms the basis of high-efficiency white light sources, have various properties unique to the InGaN/GaN material system. While many technical difficulties in fabricating the efficient GaN LEDs have been overcome, there still remain issues in further improving the efficiency. The first step to improve the performance is the accurate characterization of the device. In this presentation, various optoelectronic characterization techniques will be discussed to highlight the characteristics of blue LEDs based on the InGaN/GaN material system.
© 2015 Japan Society of Applied Physics, Optical Society of America
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