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An Improved Self-Aligned Ohmic-Contact Process for Graphene-Channel Field-Effect Transistors

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Abstract

Graphene is a layer of pure carbon atoms arranged in hexagonal honeycomb lattice. Being two-dimensional material has made graphene a superior electrical conductor which makes it one of the most attracted candidates for the new transistor channel material. However, the full applications of graphene are still limited by some critical issues such as low on/off current ratios and low cut-off frequencies despite of its outstanding intrinsic carrier transport properties [1]. Our current research focuses on improving the speed/drivability performances of Graphene-channel Field-Effect Transistors (GFETs). The fabrication of high-performance GFETs is challenging because the parasitic resistance in an extrinsic regions significantly degrade the GFET performance.

© 2014 Japan Society of Applied Physics, Optical Society of America

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