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Precise and stable polarization control in a tightly focusing system for accurate characterization of strained Silicon nanostructures

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Abstract

Recently, it was demonstrated that it is possible to excite and observe the “forbidden” TO phonons in ultrathin strained silicon (ε-Si) nanostructures using high-resolution polarized Raman spectroscopy [1]. While the allowed LO phonon observation is sufficient for isotropic strain characterizations, TO phonon is important for characterizing anisotropic strain relaxation, which is particularly present upon patterning nanostructures such as nanowires. Raman imaging of such ε-Si nanostructures requires very precise polarization control and highly stable focus positioning relative to the nanostructures within the focus. Moreover, as these structures become very small in size, a weaker signal is detected, thus needing longer exposure time at each position. Also, scanning over a large area with a number of nanostructures for better data sampling requires long duration experiments. In such situations, focus stability becomes a key concern due to the combination of thermal, vibrational and electrical noise, which compounds over time, limiting the spatial resolution in the submicron scale, hence worsening the contrast of the image.

© 2013 Japan Society of Applied Physics, Optical Society of America

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