Abstract
We are studying aiming at the chemical sensor which detects a medium with high refractive index (n > 1.45) using excitation of the surface plasmon polariton (SPP) with metal-semiconductor contact. The refractive index of a semiconductor is higher than that of transparent materials like glass and sapphire, and the semiconductors such as GaP and GaN have transparent character in the visible and the near-ultraviolet light region. By combining a semiconductor material and a metallic thin film, the excitation of the SPP is expectable at the metal-semiconductor contact. On the other hand, by the attenuated total reflectance method using Kretschmann arrangement the researches on the application to the chemical sensor are carried out. However, due to using total reflection, the detection of the reflection light from the medium which the refractive index is higher than 1.45 such as carbonic acid (n = 1.65) is difficult. In this study, GaP which is transparent in the visible region with a large refractive index (n = 3.32) and a wide band gap (2.2eV) are focused. Until now, the excitation of the SPP in GaP/Au/Air, H2O, and C2H5OH was characterized by the simulation by Rigorous Coupled Wave Analysis (RCWA) method and experiment [1], [2]. In this paper, the dependence of reflectance on the thickness of Au film is reported.
© 2013 Japan Society of Applied Physics, Optical Society of America
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