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Fast switching and oscillatory behavior of nonlinear transistors in terahertz regime

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Abstract

We show that pure crossed Andreev reflection can be generated in an N/S/N device exclusively without the parasitic local Andreev reflection and elastic co tunnelling over a wide range of bias and Fermi levels. The pure non-local conductance exhibits rapid on/off switching and oscillatory behavior when the Fermi levels in the normal and the superconducting leads are varied. This provides multiple knobs to manipulate the non-local current and the device acts as a highly tunable transistor that operates purely in the non-local transport regime.

© 2018 The Author(s)

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