GaN Technology for Terahertz Devices and Integrated Microsystems

Jian Zhang; Wei Tan

doi:10.1364/ISUPTW.2016.IM3A.3

The 8th International Symposium on Ultrafast Phenomena and Terahertz Waves
OSA Technical Digest (online) (Optica Publishing Group, 2016),
paper IM3A.3
•https://doi.org/10.1364/ISUPTW.2016.IM3A.3

GaN Technology for Terahertz Devices and Integrated Microsystems

Jian Zhang and Wei Tan

International Symposium on Ultrafast Phenomena and Terahertz Waves 2016

Chongqing China
10–12 October 2016
ISBN: 978-1-943580-21-7

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THz Technology & Devices (IM3A)

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J. Zhang and W. Tan, "GaN Technology for Terahertz Devices and Integrated Microsystems," in The 8th International Symposium on Ultrafast Phenomena and Terahertz Waves, OSA Technical Digest (online) (Optica Publishing Group, 2016), paper IM3A.3.

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Abstract

GaN technology opens up the possibilities for performance improvement of terahertz devices. A brief review on GaN based devices is given, and their potential capabilities for terahertz integrated microsystems are discussed.

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