Abstract
For the applications of nano-technology in innovative hi-tech industry, nano-lithography is the most important process to achieve it. Currently some nano-lithographic techonologies such as using e-bean, AFM, X-ray etc. that are possible to write nano-scale pits. However, those processes for mass production with high efficiency are still impossible. Right now, the commercial laser beam lithographic system is popular and cost effective for submicron-scale industry applications, but the diffraction limit of laser beam will limit it to achieve nano-scale pits even by using DUV laser with short wavelength 248nm/257nm/266 nm and high NA 0.9. In order to solve the diffraction limit issue investigate to develop thermal mode photo-resistor to control the pit size. In this study, we use the thermal lithography technology[1] to prepare the submicron structure for antireflection application.
© 2011 Optical Society of America
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