InGeSbSnTe phase change thin film for blu-ray rewritable optical recording

S. L. Ou; P. C. Kuo; H. F. Chang; C. Y. Yeh; C. T. Lee; D. Chiang

doi:10.1364/ISOM_ODS.2011.OMD15

Nonlinear Optics
OSA Technical Digest (CD) (Optica Publishing Group, 2011),
paper OMD15
•https://doi.org/10.1364/ISOM_ODS.2011.OMD15

InGeSbSnTe phase change thin film for blu-ray rewritable optical recording

S. L. Ou, P. C. Kuo, H. F. Chang, C. Y. Yeh, C. T. Lee, and D. Chiang

Joint International Symposium on Optical Memory and Optical Data Storage 2011

Kauai, Hawaii United States
17–20 July 2011
ISBN: 978-1-55752-915-2

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ISOM/ODS Poster Session I (OMD)

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S. L. Ou, P. C. Kuo, H. F. Chang, C. Y. Yeh, C. T. Lee, and D. Chiang, "InGeSbSnTe phase change thin film for blu-ray rewritable optical recording," in Nonlinear Optics, OSA Technical Digest (CD) (Optica Publishing Group, 2011), paper OMD15.

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Abstract

The crystallization temperature of the In₁₀Ge_xSb_52-xSn₂₃Te₁₅ films (x = 2, 5, and 9) film is increased with increasing Ge content. The optimum jitter value of the film with 4× recording speed is 6.6%.

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