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Conferences > IQEC > 2009 > JWA > JWA38
  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper JWA38
  • •https://doi.org/10.1364/CLEO.2009.JWA38

Thin Film P-ridge N-stripe III-V Laser Broad Area Metal-metal Bonded to Silicon

Sabarni Palit, Jeremy Kirch, Luke Mawst, Thomas Kuech, and Nan M. Jokerst

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Abstract

A p-ridge single quantum well thin film laser has been metal/metal bonded onto silicon for good thermal dissipation and low threshold current. The threshold current density is 244 A/cm2.

© 2009 Optical Society of America

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