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  • Conference on Lasers and Electro-Optics/International Quantum Electronics Conference
  • OSA Technical Digest (CD) (Optica Publishing Group, 2009),
  • paper JTuD89
  • https://doi.org/10.1364/CLEO.2009.JTuD89

Silicon photonic evanescent field molecular sensor using resonant grating interrogation

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Abstract

A silicon waveguide evanescent field molecular sensor interrogated by reflection from a surface grating is demonstrated. The sensor is probed by a beam of light incident at θ = 45º through the backside of the silicon-on-insulator (SOI) wafer. The reflected power shows a strong resonant feature near λ = 1532 nm, arising from resonant coupling of incident beam, guided mode, and the reflected beam. The resonant wavelength is very sensitive to molecular surface coverage. We have measured a Δλ = 1.0 nm resonance shift when a monolayer of streptavidin protein is bound to the sensor surface, or a 60% reflectivity change when measured at a fixed wavelength.

© 2009 Optical Society of America

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