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Optica Publishing Group
  • CLEO/Europe and IQEC 2007 Conference Digest
  • (Optica Publishing Group, 2007),
  • paper JSII_12

Stimulated Emission in Nano-structured Zinc Oxide on Lattice-Mismatched Si Substrate

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Abstract

Zinc oxide (ZnO) has been traditionally used in transparent conducting films, optical waveguides, varistors, acoustic wave devices and gas sensors. [1,2] Particularly, the large exciton binding energy at room temperature (~60 meV), which corresponds to 2.4 times the effective thermal energy at room temperature, ensures efficient ultraviolet (UV) emission from the excitons. The stability of the exciton makes ZnO a promising material for the realization of excitonic laser gain at room temperature. The strong excitonic effect in ZnO is expected to play an important role in the stimulated emission and gain processes. Commercially available compound semiconductor lasers are made of single-crystalline films fabricated by hetero-epitaxial growth on lattice-matched substrates. Epitaxial growth techniques, however, are not only expensive but are also very restrictive to the type of substrates which can be used. The restrictions of substrate and processing cost have limited the applications of semiconductor lasers. We have focused our research effort on the fabrication of semiconductor lasers by nonepitaxial growth of semiconductor materials on lattice-mismatched substrates. In this letter, we report the demonstration of ultraviolet (UV) laser action in nano-structured zinc oxide grown on silicon substrates by chemical-solution and vapor transport methods.

© 2007 IEEE

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