Abstract

The effect of phonon scattering on both exciton linewidth and dephasing time in bulk semiconductors and confined systems has attracted a lot of interest in the last 15 years. Most of the work in low-dimensional structures has been dedicated to GaAs/AlGaAs quantum well structures; linewidth broadening coefficients of ~2 µeV/K for acoustic phonons and ~10 meV for optical phonons are reported by Gammon et al ¹Moreover, contradictory results for the well-width dependence of these coefficients are reported.

© 1998 Optical Society of America