The realization of one-dimensional (1D) semiconductor nanostructures with large confinement energies is of importance for device applications. Different techniques such as growth on tilted substrates (Serpentine superlattices) or prepatterned substrates (V-groove quantum wires) and the cleaved-edge overgrowth of T-shaped structures1,2 have been demonstrated. For the T-shaped structures, the confinement energy has been recently increased to above 2kBT at room temperature by optimizing structure parameters.3,4 A decreased exciton diameter in the [110] direction in the wire compared with the [110] well was revealed by magneto-photoluminescence.5 We determine here the extension of the T-shaped quantum wire (T-QWR) state in both confining directions [110] and [001] to verify its ID character, as shown for crescent-shaped wires.6,7

© 1998 Optical Society of America

PDF Article
More Like This
Stabilized one-dimensional excitons in high-quality InxGa1−xAs T-shaped quantum wires

M. Yoshita, H. Akiyama, T. Someya, and H. Sakaki
QWA2 International Quantum Electronics Conference (IQEC) 1998

Laterally Squeezed Excitonic Wavefunction in T-shaped GaAs Edge Quantum Wires

T. Someya, H. Akiyama, and H. Sakaki
QPD11 Quantum Electronics and Laser Science Conference (QELS) 1995

Microscopic photoluminescence spectroscopy of 5nm- scale T-shaped quantum wires fabricated by cleaved edge overgroth method

H Akiyama, T Someya, and H Sakaki
FO3 International Quantum Electronics Conference (IQEC) 1996


You do not have subscription access to this journal. Citation lists with outbound citation links are available to subscribers only. You may subscribe either as an OSA member, or as an authorized user of your institution.

Contact your librarian or system administrator
Login to access OSA Member Subscription