Abstract

High-quality InxGa1−xAs T-shaped quantum wires (T-QWRs) have been fabricated for the first time by the cleaved edge overgrowth (CEO) method with molecular beam epitaxy (MBE), and microphotoluminescence (PL) study has demonstrated the uniformity of the QWR structure and the stability of one-dimensional (1D)-exitons in the QWRs.

© 1998 Optical Society of America

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