Abstract
The coherent response of excitons in semiconductor nanostructures, as measured in four-wave mixing (FWM) experiments,1 depends strongly on the inhomogeneous broadening of the exciton transition. We investigate GaAs/ Al0 3Ga0 7as single quantum wells (SQW) of 4 nm to 25 nm well width. Two main mechanisms are found to be important.
© 1998 Optical Society of America
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