Abstract
It has been reported that Te barrier doped ZnSe:Te/(CdSe)m(ZnSe)n short periode superlattice quantum wells (BDSPSQW) exhibit remarkable luminescence properties [1]. The spatial separation of the free excitons and the self-trapped excitons in BDSPSQW is the key factor in determining their unusual luminescence properties. The role of isoelectronic Te in ZnSe has been described [2], the dynamics of self-trapped excitons in Te trap centres in BDSPSQW, however, has not been well explored. In this paper we report the studies on the ultrafast dynamics of exciton trapping in BDSPSQW. The transient luminescence spectra of the samples at indirect excitation and 80 K show a rapid exciton trapping process and a slower self- trapped exciton life time which is various for different self-trapped states.
© 1996 Optical Society of America
PDF ArticleMore Like This
Weizhu Lin, Wenji Pen, Geng Xu, Zhongling Pen, and Shixin Yuan
QTuB9 Quantum Electronics and Laser Science Conference (CLEO:FS) 1996
Wei-Zhu Lin, Wen-Ji Pen, and Geng Xu
QWC65 International Quantum Electronics Conference (IQEC) 1994
A. Kamashita, I. Souma, Y. Oka, H. Yang, Y. Wu, and H. Fujiyasu
TuP29 International Quantum Electronics Conference (IQEC) 1988