Abstract
Solid state lasers have been traditionally made from oxides and fluorides with very wide band gaps. Radiative emission is generated from dopants with intra-band transitions. Semiconductor materials generally haVE much lower band gaps and thus not suitable for laser host. The research of these materials has drifted apart by the fact that semiconductor devices are driven by electron and the oxide devices are driven by photons.
© 1996 Optical Society of America
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