Abstract
The ability of microcavities to change the nature of the light-matter interaction in the strong coupling regime (or vacuum field Rabi splitting) has been extensively studied in the domain of atomic physics[1] and more recently in solid state physics[2]. This regime occurs when a discrete electronic oscillator (such as an excitonic state of a quantum well) is brought into resonance with a discrete Fabry-Pèrot mode of a microcavity and when the Rabi frequency of the coupled system is larger than any dephasing time or lifetime of both oscillators. While in the usual weak coupling regime both electronic and photonic oscillators share the same energy but exhibit different linewidths, in the strong coupling regime, normal mode splitting occurs and both states acquire the same linewidth. In semiconductor microcavities there have been few studies on the emission properties in the strong coupling regime. The nature of the system which leads to emission is significantly different from the atomic physics case because of the 2-dimensional translational invariance of the system and consequently the existence of in-plane dispersion relations which determine the relaxation mechanisms. Moreover the existence of unavoidable inhomogeneous broadening may affect the dynamic properties. This question is not addressed in atomic physics.
© 1996 Optical Society of America
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