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Optica Publishing Group
  • International Quantum Electronics Conference
  • 1996 OSA Technical Digest Series (Optica Publishing Group, 1996),
  • paper ME5

High-intensity femtosecond pulse propagation on a semiconductor exciton resonance

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Abstract

Previously, high-intensity ultrashort pulse propagation below the exciton resonance in semiconductors has been studied [1]. The main finding was pulse breakup due to escape from adiabatic following. Pulse propagation at the donor bound exciton in CdS [2] revealed a two-level atom like behavior including self-induced transparency (SIT). However, this behavior should be substantially modified at the exciton resonance of a semiconductor due to the influence of many-body interactions [3]. It was shown that the area theorem is different then from two-level systems, and a breakup of a multiple pi-pulse into multiples of two-pi pulses would not be expected.

© 1996 Optical Society of America

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