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Optica Publishing Group
  • International Quantum Electronics Conference
  • OSA Technical Digest (Optica Publishing Group, 1994),
  • paper QTuO5

Temperature dependence of avalanche threshold and crass relaxation in Tm:LiYF4

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Abstract

Avalanche upconversion, characterized by the sudden appearance of increasing absorption and upconversion emission above a threshold intensity in heavily doped Tm:YALO and Tm:LiYF4, has been reported previously.1 A density matrix theory has been proposed to account tor this phenomenon, comprised of two sequential processes, namely near-neighbor cross relaxation followed by excitation migration between more distant impurity ions.1 Here we present results to test the model. They show that avalanche threshold displays a minimum at about 110 K in Tm:LiYF4, (at λex.= 648.24 um) and that cross relaxation occurs with a rate which maximizes at about 30 K. Our analysis reveals that cross relaxation is initiated from the second Stark level of the 3Ή4 state and that its temperature dependence can be explained on the basis of specific phonon-assisted transitions among Stark levels. This result is relevant both to models of the avalanche process and to operation of mid-infrared Tm3,4 lasers which rely on cross relaxation.

© 1994 Optical Society of America

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